Surface acoustic wave (saw) resonator
AssigneeAvago Technologies General IP (Singapore) Pte. Ltd.
InventorsRichard C. Ruby, Stephen Roy Gilbert, John D. Larson, III
Life of this patent
Estimating the term…
Abstract
An apparatus includes a silicon (Si) substrate having a first surface and a second surface, the silicon substrate having a resistivity at room temperature greater than approximately 1000 Ω-cm, and less than approximately 15000 Ω-cm; and a piezoelectric layer disposed over the substrate and having a first surface and a second surface. The piezoelectric layer may have a thickness in the range of approximately 0.5 μm to approximately 30.0 μm, and is substantially without iron (Fe).
Claims28
An apparatus, comprising:
- a silicon (Si) substrate having a first surface and a second surface, the silicon substrate having a resistivity at room temperature greater than approximately 1000 Ω-cm, and less than approximately 15000 Ω-cm;
- and
- a piezoelectric layer disposed over the substrate and having a first surface and a second surface.
A surface acoustic wave (SAW) filter comprising a plurality of SAW resonator structures, one or more of the plurality of SAW resonator structures comprising:
- a silicon (Si) substrate having a first surface and a second surface, the silicon substrate having a resistivity at room temperature that is greater than approximately 1000 Ω-cm and less than approximately 15000 Ω-cm;
- and
- a piezoelectric layer disposed over the substrate and having a first surface and a second surface.
Dependencies are inferred from the claim text.