A Method Forming a Graphene Oxide-Reduced Graphene Oxide Junction
AssigneeNokia Technologies Oy
InventorsDi WEI, Mark ALLEN
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AssigneeNokia Technologies Oy
InventorsDi WEI, Mark ALLEN
Estimating the term…
A method including a deposition step comprising depositing a layer of graphene oxide; a deposition step including selectively exposing a region of the deposited graphene oxide layer to electromagnetic radiation to form a region of reduced graphene oxide adjacent to a neighbouring region of unexposed graphene oxide, the graphene oxide and adjacent reduced graphene oxide regions forming a junction therebetween to produce a graphene oxide-reduced graphene oxide junction layer; and repeating the deposition and exposure steps for one or more further respective layers of graphene oxide, over an underlying graphene oxide-reduced graphene oxide junction layer, to produce an apparatus in which the respective junctions of the graphene oxide-reduced graphene oxide layers, when considered together, extend in the third dimension.
A method comprising:
An apparatus comprising a plurality of overlying graphene oxide-reduced graphene oxide junction layers, each graphene oxide-reduced graphene oxide junction layer comprising a region of reduced graphene oxide adjacent to a neighbouring region of graphene oxide, wherein the graphene oxide and adjacent reduced graphene oxide regions of each layer form a junction therebetween, and wherein the plurality of graphene oxide-reduced graphene oxide junction layers overlie one another such that the respective junctions of the layers, when considered together, extend in the third dimension.
Dependencies are inferred from the claim text.