Memory Arrays and Methods of Forming Memory Arrays

A method of forming a memory array, comprising:

• forming a stack over a semiconductor substrate;
• the stack comprising a first region of programmable material over a first access/sense material;
• patterning the stack into first lines extending along a first direction;
• the first lines comprising a first series of access/sense lines;
• forming a second region of programmable material over the first lines;
• patterning the second region of programmable material into diagonal lines that cross the first lines;
• the diagonal lines extending along a diagonal direction that is not parallel to the first direction and that is not orthogonal to the first direction;
• singulating the first region of the programmable material into first programmable material portions of memory cells;
• forming second access/sense material over the diagonal lines;
• patterning the second access/sense material into second lines extending along a second direction;
• the second direction being substantially orthogonal to the first direction;
• the second lines comprising a second series of access/sense lines;
• singulating the second region of the programmable material into second programmable material portions of the memory cells;
• and
• wherein each of the memory cells is uniquely addressed by a combination of an access/sense line from the first series and an access/sense line from the second series.

A method of forming a memory array, comprising:

• forming first access/sense material over a semiconductor substrate;
• patterning the first access/sense material into first lines extending laterally relative to an upper surface of the substrate along a first direction;
• the first lines comprising a first series of access/sense lines;
• forming diagonal line of phase change material over the first lines;
• the diagonal lines extending along a diagonal direction that is not parallel to the first direction and that is not orthogonal to the first direction;
• forming second access/sense material over the diagonal lines;
• the second lines comprising a second series of access/sense lines extending substantially orthogonal relative to the first series of access/sense lines;
• and
• singulating the phase change material into individual memory cells that extend vertically upward relative to the upper surface of the substrate.