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US 2017/0250340 A1Published application
Barrier layer for correlated electron material
AssigneeArm Limited
InventorsCarlos Alberto Paz de Araujo, Kimberly Gay Reid, Lucian Shifren
Life of this patent
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Abstract
Subject matter disclosed herein may relate to correlated electron switch devices, and may relate more particularly to one or more barrier layers having various characteristics formed under and/or over and/or around correlated electron material.
Claims20
1-19. (canceled)
A method, comprising:
- forming a layer of substantially conductive material between an electrode and a correlated electron material to prevent diffusion of a dopant from the correlated electron material.
An apparatus, comprising:
- a layer of substantially conductive material positioned between an electrode and a correlated electron material to prevent diffusion of a dopant from the correlated electron material.
A layer disposed between an electrode and a correlated electron material, comprising:
- a substantively conductive material to include one or more of TiN, TiCN, TiON, RuON, ReOxNy, ReO3, RuO2, WN, or IrO2, or any combination thereof, to prevent diffusion of a dopant from the correlated electron material.
Dependencies are inferred from the claim text.