Non-volatile memory device including ferroelectrics and method of manufacturing the same
AssigneeSK hynix Inc.
InventorsSe Hun KANG, Deok Sin KIL
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Abstract
A non-volatile memory device may include a semiconductor substrate, a ferroelectric layer, a source, a drain, a gate and a channel region. The semiconductor substrate may have a recess. The ferroelectric layer may be formed in the recess. The source may be arranged at a first side of the recess. The drain may be arranged at a second side of the recess opposite to the first side. The gate may be arranged on the ferroelectric layers. The channel region may be formed on the recess between the source and the drain.
Claims14
A non-volatile memory device comprising:
- a semiconductor substrate having a recess including a depth from an upper surface of the semiconductor substrate;
- a single ferroelectric layer buried in the recess, wherein an upper surface the single ferroelectric layer and the upper surface of the semiconductor substrate are a same plane;
- a source arranged at a first side of the single ferroelectric layer;
- a drain arranged at a second side of the single ferroelectric layer, wherein the second side is located opposite to the first side with respect to the single ferroelectric layer;
- and
- a gate arranged over the single ferroelectric layer,
- wherein a channel region is formed in the semiconductor substrate along a contour of the recess and between the source and the drain.
The non-volatile memory device of claim I, wherein the ferroelectric layer comprises hafnium oxide.
A non-volatile memory device comprising:
- a semiconductor substrate;
- a storage member formed in the semiconductor substrate;
- a source and a drain formed in the semiconductor substrate and at both sides of the storage member;
- and
- a gate formed over the storage member,
- wherein the storage member is formed of a ferroelectric material having varying polarization states depending on an electric field level which is applied from the gate to the storage member.
(canceled)
A method of manufacturing a non-volatile memory device, the method comprising:
- implanting impurities into a semiconductor substrate;
- etching the semiconductor substrate to form a recess, wherein the recess defines a source and a drain in the semiconductor substrate;
- forming a ferroelectric layer in the recess;
- and
- forming a gate over the ferroelectric layer.
14-16. (canceled)
Dependencies are inferred from the claim text.