Semiconductor light-emitting device

A semiconductor light-emitting device comprising:

• a first conduction type first semiconductor layer;
• a second conduction type second semiconductor layer;
• a light-emitting layer disposed between the first semiconductor layer and the second semiconductor layer;
• a transparent electrode on the second semiconductor layer;
• an insulating film covering a part of the transparent electrode and having a plurality of openings;
• and
• a reflection electrode formed on the insulating film and being in contact with the transparent electrode through the plurality of openings;
• wherein the transparent electrode contains In;
• the thickness of the transparent electrode is 10 nm to 150 nm;
• the reflection electrode is an electrode for supplying current to the second semiconductor layer;
• the reflection electrode has a plurality of contact electrodes being in contact with the transparent electrode at the plurality of openings;
• and
• the number density of the contact electrodes is 400/mm2 to 1,000/mm2.