Die-cutting approaches for foil-based metallization of solar cells
AssigneeSunPower Corporation
InventorsRichard Hamilton Sewell, Benjamin Ian Hsia
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Abstract
Die-cutting approaches for foil-based metallization of solar cells, and the resulting solar cells are disclosed herein. Die-cutting approaches for foil-based metallization of solar cells include forming a plurality of semiconductor regions in or above a substrate and forming a patterned damage buffer in alignment with locations between the plurality of semiconductor regions. Additionally, a metal layer comprising a metal seed layer and/or metal foil is formed over the patterned damage buffer. The metal layer is cut by a cutting die at locations between the plurality of semiconductor regions by applying a mechanical force to the cutting die.
Claims23
A method of fabricating a solar cell, the method comprising:
- forming a plurality of alternating N-type and P-type polycrystalline silicon semiconductor regions on a single crystalline silicon substrate;
- forming a patterned damage buffer in alignment with locations between the plurality of alternating N-type and P-type polycrystalline silicon semiconductor regions;
- forming a metal seed layer over the patterned damage buffer;
- placing a metal foil over the metal seed layer;
- placing a cutting die above the metal foil, the cutting die comprising a plurality of cutter blades;
- cutting the metal foil at locations between the plurality of alternating N-type and P-type polycrystalline silicon semiconductor regions by applying a mechanical force to the plurality of cutter blades to electrically isolate regions of the metal foil.
A method of fabricating a solar cell, the method comprising:
- forming a plurality of semiconductor regions in or above a substrate;
- forming a patterned damage buffer in alignment with locations between the plurality of semiconductor regions;
- putting a metal layer over the patterned damage buffer;
- placing a cutting die above the metal layer;
- cutting the metal layer at locations between the plurality of semiconductor regions by applying a mechanical force to the cutting die.
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A method of fabricating a solar cell, the method comprising:
- forming a plurality of alternating N-type and P-type polycrystalline silicon semiconductor regions on a single crystalline silicon substrate;
- forming a patterned damage buffer in alignment with locations between the plurality of alternating N-type and P-type polycrystalline silicon semiconductor regions;
- placing a metal foil over the patterned damage buffer;
- placing a cutting die above the metal foil, the cutting die comprising a plurality of cutter blades;
- cutting the metal foil at locations between the plurality of alternating N-type and P-type polycrystalline silicon semiconductor regions by applying a mechanical force to the plurality of cutter blades to electrically isolate regions of the metal foil.
Dependencies are inferred from the claim text.