Photodiode using graphene-silicon quantum dot hybrid structure and method of manufacturing the same
AssigneeUniversity-Industry Cooperation Group of Kyung Hee University
InventorsSuk Ho CHOI, Dong Hee SHIN, Sung KIM
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Abstract
Disclosed is a photodiode, which includes a graphene-silicon quantum dot hybrid structure, having improved optical and electrical characteristics by controlling the sizes of silicon quantum dots and the doping concentration of graphene. The photodiode including the graphene-silicon quantum dot hybrid structure of the present disclosure may be easily manufactured, may be manufactured over a large area, has a wide photodetection band from the ultraviolet light region to the near infrared region, and allows selective absorption energy control.
Claims8
A photodiode comprising a graphene-silicon quantum dot hybrid structure, the photodiode comprising:
- a hybrid structure composed of a silicon quantum dot layer comprising silicon (Si) quantum dots, each of which is formed in a thin film of a silicon oxide, and doped graphene formed on the silicon quantum dot layer;
- and
- an electrode formed upper and lower parts of the hybrid structure,
- wherein optical and electrical characteristics of the photodiode are controlled according to the size of the silicon quantum dots and a doping concentration of the doped graphene.
A method of manufacturing a photodiode comprising a graphene-silicon quantum dot hybrid structure, the method comprising:
- forming a silicon quantum dot layer comprising silicon quantum dots, each of which is formed in a thin film of a silicon oxide, on a substrate;
- forming a hybrid structure by forming doped graphene on the silicon quantum dot layer;
- and
- forming an electrode on upper and lower parts of the hybrid structure.
Dependencies are inferred from the claim text.