Method for manufacturing polycrystalline silicon thin-film solar cells by means method for crystallizing large-area amorphous silicon thin film using linear electron beam

A method of manufacturing a polycrystalline silicon thin film solar cell by a method of crystallizing a large-area amorphous silicon thin film using a linear electron beam, the method of manufacturing a polycrystalline silicon thin film solar cell comprising:

• preparing a substrate;
• depositing a type 1+ amorphous silicon layer in which the type 1+ amorphous silicon layer is formed on the substrate;
• depositing a type 1 amorphous silicon layer in which the type 1 amorphous silicon layer is formed on the type 1+ amorphous silicon layer;
• forming an absorption layer in which the absorption layer is formed by crystallizing the type 1 amorphous silicon layer and the type 1+ amorphous silicon layer by irradiating the type 1 amorphous silicon layer with a linear electron beam;
• depositing a type 2 amorphous silicon layer in which the type 2 amorphous silicon layer is formed on the absorption layer;
• and
• forming an emitter layer in which the emitter layer is formed by crystallizing the type 2 amorphous silicon layer by irradiating the type 2 amorphous silicon layer with a linear electron beam,
• wherein the linear electron beam is irradiated in a linear scan mode in which the linear electron beam is reciprocated within a predetermined distance on the type 1 and type 2 amorphous silicon layers,
• wherein the type 1 and type 2 amorphous silicon layers are formed by an e-beam evaporator.

A method of manufacturing a polycrystalline silicon thin film solar cell by a method of crystallizing a large-area amorphous silicon thin film using a linear electron beam, the method of manufacturing a polycrystalline silicon thin film solar cell comprising:

• preparing a substrate;
• depositing a type 1+ amorphous silicon layer in which the type 1+ amorphous silicon layer is formed on the substrate;
• depositing a type 1 amorphous silicon layer in which the type 1 amorphous silicon layer is formed on the type 1+ amorphous silicon layer;
• forming an absorption layer in which the absorption layer is formed by crystallizing the type 1 amorphous silicon layer and the type 1+ amorphous silicon layer by irradiating the type 1 amorphous silicon layer with a linear electron beam;
• depositing a type 2 amorphous silicon layer in which the type 2 amorphous silicon layer is formed on the absorption layer;
• and
• forming an emitter layer in which the emitter layer is formed by crystallizing the type 2 amorphous silicon layer by irradiating the type 2 amorphous silicon layer with a linear electron beam,
• wherein the linear electron beam is irradiated in a linear scan mode in which the linear electron beam is reciprocated within a predetermined distance on the type 1 and type 2 amorphous silicon layers,
• wherein the type 1 and type 2 amorphous silicon layers are formed by a physical vapor deposition method.

A method of manufacturing a polycrystalline silicon thin film solar cell by a method of crystallizing a large-area amorphous silicon thin film using a linear electron beam, the method of manufacturing a polycrystalline silicon thin film solar cell comprising:

• preparing a substrate;
• depositing a type 1+ hydrogenated amorphous silicon layer in which the type 1+ hydrogenated amorphous silicon layer is deposited on the substrate by a plasma enhanced chemical vapor deposition method;
• depositing a type 1 hydrogenated amorphous silicon layer in which the type 1 hydrogenated amorphous silicon layer is deposited on the type 1+ hydrogenated amorphous silicon layer by a plasma enhanced chemical vapor deposition method;
• forming an absorption layer in which the absorption layer is formed by crystallizing the type 1 hydrogenated amorphous silicon layer and the type 1+ hydrogenated amorphous silicon layer by irradiating the type 1 hydrogenated amorphous silicon layer with a linear electron beam;
• depositing a type 2 hydrogenated amorphous silicon layer in which the type 2 hydrogenated amorphous silicon layer is deposited on the absorption layer by a plasma enhanced chemical vapor deposition method;
• and
• forming an emitter layer in which the emitter layer is formed by crystallizing the type 2 hydrogenated amorphous silicon layer by irradiating the type 2 hydrogenated amorphous silicon layer with a linear electron beam,
• wherein the linear electron beam is irradiated in a linear scan mode in which the linear electron beam is reciprocated within a predetermined distance on the type 1 and type 2 hydrogenated amorphous silicon layers.