Bandgap grading of czts solar cell
AssigneeInternational Business Machines Corporation
InventorsTalia S. Gershon, Marinus J.P. Hopstaken, Jeehwan Kim, Yun Seog Lee
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Abstract
A method for fabricating a photovoltaic device includes forming a polycrystalline absorber layer including Cu—Zn—Sn—S(Se) (CZTSSe) over a substrate. The absorber layer is rapid thermal annealed in a sealed chamber having elemental sulfur within the chamber. A sulfur content profile is graded in the absorber layer in accordance with a size of the elemental sulfur and an anneal temperature to provide a graduated bandgap profile for the absorber layer. Additional layers are formed on the absorber layer to complete the photovoltaic device.
Claims6
A photovoltaic device, comprising:
- an absorber layer including Cu—Zn—Sn—S(Se) (CZTSSe) formed on a first contact layer on a substrate, the absorber layer including a graded bandgap across its thickness;
- a buffer layer formed in contact with the absorber layer;
- and
- a transparent conductive contact layer formed over the buffer layer formed on the absorber layer.
Dependencies are inferred from the claim text.