LIFT printing of conductive traces onto a semiconductor substrate
AssigneeOrbotech Ltd.
InventorsMichael Zenou, Zvi Kotler
Life of this patent
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Abstract
A method for metallization includes providing a transparent donor substrate (34) having deposited thereon a donor film (36) including a metal with a thickness less than 2 μm. The donor substrate is positioned in proximity to an acceptor substrate (22) including a semiconductor material with the donor film facing toward the acceptor substrate and with a gap of at least 0.1 mm between the donor film and the acceptor substrate. A train of laser pulses, having a pulse duration less than 2 ns, is directed to impinge on the donor substrate so as to cause droplets (44) of the metal to be ejected from the donor layer and land on the acceptor substrate, thereby forming a circuit trace (25) in ohmic contact with the semiconductor material.
Claims26
A method for metallization, comprising:
- providing a transparent donor substrate having deposited thereon a donor film comprising a metal with a thickness less than 2 μm;
- positioning the donor substrate in proximity to an acceptor substrate comprising a semiconductor material with the donor film facing toward the acceptor substrate and with a gap of at least 0.1 mm between the donor film and the acceptor substrate;
- and
- directing a train of laser pulses, having a pulse duration less than 2 ns, to impinge on the donor substrate so as to cause droplets of the metal to be ejected from the donor layer and land on the acceptor substrate, thereby forming a circuit trace in ohmic contact with the semiconductor material.
Apparatus for material deposition, comprising:
- a transparent donor substrate having deposited thereon a donor film comprising a metal with a thickness less than 2 μm;
- a positioning assembly, which is configured to position the donor substrate in proximity to an acceptor substrate comprising a semiconductor material with the donor film facing toward the acceptor substrate and with a gap of at least 0.1 mm between the donor film and the acceptor substrate;
- and
- an optical assembly, which is configured to direct pulses of laser radiation, having a pulse duration less than 2 ns, to impinge on the donor substrate so as to cause droplets of the a metal to be ejected from the donor layer and land on the acceptor substrate, thereby forming a circuit trace in ohmic contact with the semiconductor material.
Dependencies are inferred from the claim text.