Semiconductor device including gate electrode extending between nanosheets

A semiconductor device, comprising:

• a substrate;
• a plurality of nanosheets on the substrate, the plurality of nanosheets extending in a first direction;
• and
• a gate electrode on the substrate burying the plurality of nanosheets, the gate electrode including a first region between the plurality of nanosheets and a second region surrounding the first region,
• the first region and the second region have different stack structures from each other, wherein
• the gate electrode includes a plurality of metal layers that are stacked on each other.

A semiconductor device, comprising:

• a pair of source/drain regions spaced apart from each other in a first direction, the pair of source/drain regions including sidewalls that face each other;
• a plurality of nanosheets between the pair of source/drain regions, the plurality of nanosheets spaced apart from each other along the sidewalls of the pair of source/drain regions, the plurality of nanosheets including a semiconductor material;
• a gate electrode including a first region extending between the plurality of nanosheets and a second region on an uppermost one of the plurality of nanosheets, the first region connected to the second region;
• and
• a gate insulating layer between gate electrode and the plurality of nanosheets, the gate insulating layer extending between the gate electrode and the pair of source/drain regions,
• wherein a length of the gate electrode in the first direction is greater than a space between adjacent nanosheets among the plurality of nanosheets, and
• wherein the gate electrode includes metal layers, and
• a number of the metal layers included in the first region is less than a number of the metal layers included in the second region.