US 2017/0250284 A1Published application

Formation of work-function layers for gate electrode using a gas cluster ion beam

AssigneeGlobalfoundries Inc.

InventorsYanzhen WANG, Jidong HUANG, Hui ZANG

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Abstract

An angled gas cluster ion beam is used for each sidewall and top of a fin (two applications) to form work-function metal layer(s) only on the sidewalls and top of each fin.

Claims6

Dependent claims

A method, comprising:

providing a starting semiconductor structure, the starting semiconductor structure comprising a semiconductor substrate, at least one fin coupled to the substrate, a bottom portion thereof surrounded by isolation material, and spacers for at least one gate surrounding a top portion of the at least one fin;
and
selectively forming work-function metal only on sidewalls and a top of the at least one fin, such that no work-function metal is formed on the spacers.

Dependencies are inferred from the claim text.

Facts

Application: 15/053,867Filed 25 Feb 2016
Published: 31 Aug 2017
Term ends: Not estimatedThe source records don’t support an estimate.

Classification11 codes

H10D 30/6211
Fin field-effect transistors [FinFET]: having fin-shaped semiconductor bodies integral with the bulk semiconductor substrates
H10D 30/024
Of FETs having insulated gates [IGFET]: of fin field-effect transistors [FinFET]
H10D 30/0241
Of fin field-effect transistors [FinFET]: doping of vertical sidewalls, e.g. using tilted or multi-angled implants
H10D 30/62
Insulated-gate field-effect transistors [IGFET]: fin field-effect transistors [FinFET]

Family

US 9,748,392 B1Related patent
US 2017/0250284 A1This patent

From the US filing history. Foreign family members aren’t listed.

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