Fin-type field effect transistor structure and manufacturing method thereof

A fin-type field effect transistor, comprising:

• a substrate having fins and trenches located between the fins;
• insulators, located in the trenches and between the fins;
• at least one gate structure, disposed over the fins and on the insulators;
• first spacers, disposed on opposite sidewalls of the at least one gate structure;
• source and drain regions, disposed on two opposite sides of the at least one gate structure and beside the first spacers and disposed on the fins;
• and
• second spacers, disposed on the two opposite sides of the at least one gate structure and beside the first spacers, wherein the second spacers are located on opposite sidewalls of the source and drain regions to sandwich the source and drain regions there-between and the source and drain regions located on the different fins are separate from one another, and wherein the second spacers located at two facing sidewalls of two most adjacent source/drain regions are separate from each other.

A method for forming a fin-type field effect transistor, comprising:

• providing a substrate with fins and insulators located between the fins;
• forming a stack structure over the substrate, on the insulators and across the fins;
• forming a dielectric spacer material layer conformally covering the fins and the stack structure;
• performing a selective etching process to remove the dielectric spacer material layer to form first spacers beside the stack structure and second spacers on sidewalls of the fins and remove portions of the fins to form recesses between the second spacers in the same selective etching process;
• forming source and drain regions in the recesses between the second spacers, wherein the source and drain regions are located at opposite sides of the stack structure and beside the first spacers;
• removing the stack structure between the first spacers;
• and
• forming a gate structure between the first spacers.