Isolated iii-n semiconductor devices
AssigneeTexas Instruments Incorporated
InventorsNaveen Tipirneni, Sameer Pendharkar
Life of this patent
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Abstract
A semiconductor device with a substrate, a low defect layer formed in a fixed position relative to the substrate, and a barrier layer comprising III-N semiconductor material formed on the low-defect layer and forming an electron gas in the low-defect layer. The device also has a source contact, a drain contact, and a gate contact for receiving a potential, the potential for adjusting a conductive path in the electron gas and between the source contact and the drain contact. Lastly, the device has a one-sided PN junction between the barrier layer and the substrate.
Claims20
A semiconductor device, comprising:
- a substrate of a first conductivity type;
- a gallium-nitride layer formed over the substrate;
- a barrier layer comprising III-N semiconductor material formed on the gallium-nitride layer;
- a doped layer of a second, opposite conductivity type between the gallium-nitride layer and the substrate, wherein the doped layer has a greater doping concentration than the substrate;
- a source contact;
- a drain contact;
- a gate contact between the source contact and the drain contact;
- a first dielectric filled trench along a first edge of the gallium-nitride layer, a first edge of the barrier layer, and a first edge of the doped layer;
- and
- a second dielectric filled trench along a second edge of the gallium-nitride layer, a second edge of the barrier layer, and a second edge of the doped layer.
A method of forming a semiconductor device, comprising:
- forming a gallium-nitride layer over a substrate, the substrate having a first conductivity type;
- forming a barrier layer comprising III-N semiconductor material on the gallium nitride layer;
- forming a doped layer of a second, opposite conductivity type between the gallium-nitride layer and the substrate, wherein the doped layer has a greater doping concentration than the substrate;
- forming a source contact;
- forming a drain contact;
- forming a gate contact between the source contact and the drain contact;
- and
- forming a first dielectric filled trench along a first edge of the gallium-nitride layer, a first edge of the barrier layer, and a first edge of the doped layer;
- and
- forming a second dielectric filled trench along a second edge of the gallium-nitride layer, a second edge of the barrier layer, and a second edge of the doped layer.
Dependencies are inferred from the claim text.