Etch stop for airgap protection
AssigneesInternational Business Machines Corporation, Globalfoundries Inc.
InventorsKangguo Cheng, Ruilong Xie, Tenko Yamashita
Life of this patent
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Abstract
A semiconductor device that includes a gate structure on a channel region of a semiconductor device. Source and drain regions may be present on opposing sides of the channel region. The semiconductor device may further include a composite gate sidewall spacer present on a sidewall of the gate structure. The composite gate sidewall spacer may include a first composition portion having an air gap encapsulated therein, and a second composition portion that is entirely solid and present atop the first composition portion.
Claims20
A semiconductor device comprising:
- a gate structure on a channel region of a semiconductor device, wherein source and drain regions are on opposing sides of the channel region;
- and
- a composite gate sidewall spacer present on a sidewall of the gate structure, wherein the composite gate sidewall spacer includes a first composition portion having an air gap encapsulated therein, and a second composition portion that is entirely solid.
A semiconductor device comprising:
- a gate structure on a channel region of a fin structure, wherein source and drain regions are on opposing sides of the channel region;
- and
- a composite gate sidewall spacer present on a sidewall of the gate structure, wherein the composite gate sidewall spacer includes a first composition portion having an air gap encapsulated therein, and a second composition portion present atop the first composition portion.
Dependencies are inferred from the claim text.