Silicon carbide semiconductor device and method for manufacturing same
AssigneeMitsubishi Electric Corporation
InventorsToshikazu TANIOKA, Yoichiro TARUI, Masayuki FURUHASHI
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Abstract
A silicon carbide semiconductor device can switch between an on-state and an off-state by controlling a channel region with an application of a gate voltage. The silicon carbide semiconductor device includes a silicon carbide layer, a gate insulating film, and a gate electrode. The silicon carbide layer includes a channel region. The gate insulating film covers the channel region. The gate electrode faces the channel region with the gate insulating film therebetween. The resistance of the channel region in the on-state takes a minimum value at a temperature of not less than 100° C. and not more than 150° C.
Claims13
A silicon carbide semiconductor device capable of switching between an on-state and an off-state by controlling a channel region with an application of a gate voltage, comprising:
- a silicon carbide layer including said channel region;
- a gate insulating film covering said channel region of said silicon carbide layer;
- and
- a gate electrode facing said channel region of said silicon carbide layer with said gate insulating film therebetween, wherein
- a resistance of said channel region in said on-state takes a minimum value at a temperature of not less than 100° C. and not more than 150° C.
A manufacturing method of a silicon carbide semiconductor device capable of switching between an on-state and an off-state by controlling a channel region with an application of a gate voltage, comprising:
- forming a silicon carbide layer including said channel region;
- forming a gate insulating film which covers said channel region of said silicon carbide layer, said forming a gate insulating film including
- forming an oxide film which covers said channel region,
- performing a first thermal treatment for reducing an interface state density of said channel region in a nitriding atmosphere after said forming an oxide film, and
- performing a second thermal treatment for increasing said interface state density of said channel region in an oxidizing atmosphere after said first thermal treatment;
- and
- forming a gate electrode which faces said channel region of said silicon carbide layer with said gate insulating film therebetween.
Dependencies are inferred from the claim text.