MOSFET Having Source Region Formed in a Double Wells Region

A device comprising:

• a first gate electrode and a second gate electrode over a substrate and on opposite sides of a drain region;
• a first source region and the drain region on opposite sides of the first gate electrode;
• a second source region and the drain region on opposite sides of the second gate electrode;
• a first doped well formed under the first source region;
• a second doped well formed under the first source region, wherein the first doped well is embedded in the second doped well, and wherein a doping density of the first doped well is greater than a doping density of the second doped well;
• and
• a body contact region adjacent to the first source region, wherein sidewalls of the body contact region are aligned with sidewalls of the first source region from a top view.

An apparatus comprising:

• a first transistor comprising a first gate, a first source, a drain and a first body contact, wherein:
• the first body contact and the first source form a first column from a top view;
• and
• the first source formed in a first stacked well region, wherein the first stacked well region comprises:
• a first region formed over a substrate;
• and
• a second region embedded in the first region;
• a second transistor comprising a second gate, a second source, the drain and a second body contact, and wherein:
• the second body contact and the second source form a second column from the top view;
• and
• the second source formed in a second stacked well region, wherein the second stacked well region comprises:
• a third region over the substrate;
• and
• a fourth region embedded in the third region;
• and
• a pickup ring surrounding the first transistor and the second transistor.