US 2017/0250249 A1 · Method of Forming Ultra-Thin Nanowires

Abstract

Provided is a method of forming a nanowire-based device. The method includes forming a first mask layer over a substrate; forming a first opening in the first mask layer; growing a first nanowire that protrudes through the first opening in the first mask layer, wherein the first nanowire has a first diameter; removing the first mask layer; oxidizing a sidewall of the first nanowire; etching the oxidized sidewall of the first nanowire; forming a second mask layer overlaying the substrate; removing the first nanowire thereby forming a second opening in the second mask layer; and growing a second nanowire that protrudes through the second opening in the second mask layer, wherein the second nanowire has a second diameter and the second diameter is different than the first diameter.

Claims20

Dependent claims

A method comprising:

forming a first mask layer over a substrate;
forming a first opening in the first mask layer thereby exposing a first portion of the substrate;
forming a first spacer layer over the first mask layer and in the first opening;
removing a portion of the first spacer layer formed in the first opening to thereby form a second opening extending through the first mask layer and a remaining portion of the first spacer layer;
forming a second spacer layer over the first mask layer and in the second opening;
removing a portion of the second spacer layer formed in the second opening thereby forming a third opening extending through the first mask layer, the remaining portion of the first spacer layer, and a remaining portion of the second spacer layer;
and
growing a nanowire through the third opening.

5 more elements

Dependencies are inferred from the claim text.

Method of Forming Ultra-Thin Nanowires

Life of this patent

Method of Forming Ultra-Thin Nanowires

Life of this patent

Abstract

Claims20