Method for manufacturing multilayer crown-shaped mim capacitor
AssigneePowerchip Technology Corporation
InventorsShyng-Yeuan Che, Wen-Yi Wong
Life of this patent
Estimating the term…
Loading patent…
AssigneePowerchip Technology Corporation
InventorsShyng-Yeuan Che, Wen-Yi Wong
Estimating the term…
A method for fabricating a multi-layer, crown-shaped MIM capacitor is provided. A base having therein a conductive region within a capacitor-forming region is formed. An IMD layer is deposited on the base to cover the capacitor-forming region. A capacitor trench is formed within the capacitor-forming region. The capacitor trench penetrates through the IMD layer, thereby exposing a portion of the conductive region. A concentric capacitor lower electrode structure is formed within the capacitor trench. The concentric capacitor lower electrode structure includes a first electrode and a second electrode surrounded by the first electrode. The first electrode is in direct contact with the conductive region. A conductive supporting pedestal is formed within the capacitor trench for fixing and electrically connecting bottom portions of the first and second electrodes. A capacitor dielectric layer conformally lining the first and second electrodes and a top surface of the conductive supporting pedestal is formed.
A method for fabricating a multi-layer, crown-shaped metal-insulator-metal (MIM) capacitor, comprising:
Dependencies are inferred from the claim text.