Variable resistance memory devices and methods of manufacturing the same

A method of manufacturing a variable resistance memory device, the method comprising:

• forming a first conductive pattern extending in a first direction on a substrate;
• forming a plurality of first preliminary memory cells on the first conductive pattern, each of the first preliminary memory cells including a first lower sacrificial pattern and having a pillar shape;
• forming a second conductive pattern and a plurality of second preliminary memory structures on the first preliminary memory cells, each of the second preliminary memory structures including a first upper sacrificial pattern, and the second conductive pattern and each of the second preliminary memory structures extending in a second direction transverse to the first direction;
• partially etching each of the first lower and the first upper sacrificial patterns exposed by sidewalls of the first preliminary memory cells and the second preliminary memory structures to form a first sacrificial pattern, a second upper sacrificial pattern, a first recess adjacent to sidewalls of the first sacrificial pattern and a second recess adjacent to sidewalls of the second upper sacrificial pattern;
• forming a variable resistance pattern and a capping pattern to form first memory cells, the variable resistance pattern filling the first recess and the second recess, and the capping pattern being formed on a sidewall of each of the first memory cells, a top surface of the first conductive pattern and a sidewall of each of the second preliminary memory structures;
• forming a third conductive pattern extending in a first direction on each of the second preliminary memory structures;
• and
• etching the second preliminary memory structures to form a trench between the third conductive patterns, and to form second memory cells, each second memory cell including a second sacrificial pattern.