Isolation structure and image sensor having the same
AssigneeDongbu HiTek Co., Ltd.
InventorSang Hwa Kim
Life of this patent
Estimating the term…
Abstract
Disclosed is an image sensor having an isolation structure. The isolation structure includes a deep well region of a first conductive type disposed in a substrate of a second conductive type and an isolation region disposed between charge accumulation regions for accumulating photo-charges in order to electrically isolate the charge accumulation regions from each other. The charge accumulation regions are disposed on the deep well region and have the second conductive type. The isolation region is connected with the deep well region and has the first conductive type.
Claims20
An isolation structure comprising:
- a deep well region of a first conductive type disposed in a substrate of a second conductive type;
- at least two charge accumulation regions configured to accumulate photo-charges;
- an isolation region disposed between the at least two charge accumulation regions and configured to electrically isolate the at least two charge accumulation regions from each other,
- wherein the charge accumulation regions are disposed on the deep well region and have the second conductive type, and the isolation region is connected with the deep well region and has the first conductive type.
An image sensor comprising:
- a deep well region of a first conductive type disposed in a substrate of a second conductive type;
- at least two charge accumulation regions of the second conductive type disposed on the deep well region and accumulating photo-charges;
- and
- an isolation region of the first conductive type disposed between the at least two charge accumulation regions, wherein the isolation region is connected with the deep well region to electrically isolate the at least two charge accumulation regions.
An image sensor comprising:
- a deep well region of a first conductive type disposed in a substrate of a second conductive type;
- a charge accumulation region of the second conductive type disposed on the deep well region and configured to accumulate photo-charges based on light incident thereon;
- an isolation region of the first conductive type disposed on a first side of the charge accumulation region in order to electrically isolate the charge accumulation region from an adjacent charge accumulation region, wherein the isolation region is connected with the deep well region;
- a floating diffusion region disposed to be spaced apart from a second side of the charge accumulation region;
- and
- a transfer gate disposed on the substrate between the charge accumulation region and the floating diffusion region.
Dependencies are inferred from the claim text.