Semiconductor image sensor device and manufacturing method of the same

A semiconductor image sensor device, comprising:

• a substrate;
• a plurality of radiation-sensing regions formed in the substrate;
• and
• a plurality of deep trench isolation (DTI) structures formed in the substrate, wherein each pair of neighboring radiation-sensing regions is separated from one another by a respective one of the DTI structures, the DTI structure has a ratio of depth to width ranging from 2 to 30, the DTI structure comprises a dielectric layer and a liner layer aside the dielectric layer, the dielectric layer comprises silicon oxycarbonitride (SiOCN), and a material of the liner layer is different from the dielectric layer.

A manufacturing method of a semiconductor image sensor device comprising:

• forming a plurality of trenches in a substrate;
• filling dielectric layers in the trenches respectively by plasma enhanced atomic layer deposition (PEALD) method, to form deep isolation structures in the substrate;
• and
• forming a radiation-sensing region in the substrate between neighboring deep isolation structures.