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US 2017/0250210 A1Published application
Solid-state imaging device, method of manufacturing a solid-state imaging device, and electronic apparatus
AssigneeSony Corporation
InventorsNanako Kato, Toshifumi Wakano
Life of this patent
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Abstract
Provided is a solid-state imaging device including a lamination-type backside illumination CMOS (Complementary Metal Oxide Semiconductor) image sensor having a global shutter function. The solid-state imaging device includes a separation film including one of a light blocking film and a light absorbing film between a memory and a photo diode.
Claims20
A solid-state imaging device, comprising:
- a plurality of pixels, at least one of the plurality of pixels including:
- a substrate;
- a photo diode, wherein the photo diode is formed adjacent a first surface of the substrate;
- a memory;
- a transistor configured to transfer charge from the photo diode to the memory;
- and
- a separation film, wherein the separation film is disposed between the memory and the photo diode.
4 more elements
An electronic apparatus, comprising:
- an imaging device, including:
- a plurality of pixels, at least one of the plurality of pixels including:
- a substrate;
- a photo diode, wherein the photo diode is formed adjacent a first surface of the substrate;
- a memory;
- a transistor configured to transfer charge from the photo diode to the memory;
- and
- a separation film, wherein the separation film is disposed between the memory and the photo diode.
5 more elements
Dependencies are inferred from the claim text.