Semiconductor device

A semiconductor device comprising a memory cell, the memory cell comprising a transistor and a capacitor,

• wherein the transistor comprises:
• an oxide semiconductor film;
• a source electrode layer and a drain electrode layer over the oxide semiconductor film;
• a gate insulating film over the oxide semiconductor film;
• and
• a gate electrode layer over the gate insulating film,
• wherein the capacitor comprises part of the oxide semiconductor film and one of the source electrode layer and the drain electrode layer,
• wherein the part of the oxide semiconductor film and the one of the source electrode layer and the drain electrode layer overlap with each other,
• wherein the gate electrode layer of the transistor is electrically connected to a word line, and
• wherein the other of the source electrode layer and the drain electrode layer is electrically connected to a bit line.

A semiconductor device comprising a memory cell, the memory cell comprising a transistor and a capacitor,

• wherein the transistor comprises:
• an oxide semiconductor film;
• a source electrode layer and a drain electrode layer over the oxide semiconductor film;
• a gate insulating film over the oxide semiconductor film;
• and
• a gate electrode layer over the gate insulating film,
• wherein the capacitor comprises:
• part of the oxide semiconductor film;
• an insulating film over the part of the oxide semiconductor film;
• and
• an electrode layer over the insulating film, and
• wherein the part of the oxide semiconductor film, the insulating film of the capacitor, and the electrode layer of the capacitor overlap with each other.