Transistor layout with low aspect ratio
AssigneeSkyworks Solutions, Inc.
InventorsTzung-Yin LEE, Aniruddha B. JOSHI, David Scott WHITEFIELD, Maureen Rosenberg BRONGO
Life of this patent
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Abstract
A radio-frequency (RF) device includes a semiconductor substrate, a first field-effect transistor (FET) disposed on the substrate, the first FET having a first plurality of drain fingers, and a second FET connected in series with the first FET along a first dimension, the second FET having a second plurality of drain fingers that extent in a second dimension that is orthogonal with respect to the first dimension.
Claims20
A radio-frequency device comprising:
- a semiconductor substrate;
- a first field-effect transistor disposed on the substrate, the first field-effect transistor having a first plurality of drain fingers;
- and
- a second field-effect transistor connected in series with the first field-effect transistor along a first dimension, the second field-effect transistor having a second plurality of drain fingers that extent in a second dimension that is orthogonal with respect to the first dimension.
A method for fabricating a radio-frequency device, the method comprising:
- providing a semiconductor substrate;
- forming a first field-effect transistor over the semiconductor substrate, the first field-effect transistor having a first plurality of drain fingers;
- and
- forming a second field-effect transistor connected in series with the first field-effect transistor along a first dimension, the second field-effect transistor having a second plurality of drain fingers that extent in a second dimension that is orthogonal with respect to the first dimension.
A radio-frequency module comprising:
- a packaging substrate configured to receive a plurality of devices;
- and
- a transistor stack mounted on the packaging substrate, the transistor stack including a first field-effect transistor disposed on the substrate, the first field-effect transistor having a first plurality of drain fingers, and a second field-effect transistor disposed on the substrate in a series connection with the first field-effect transistor along a first dimension, the second field-effect transistor having a second plurality of drain fingers that extent in a second dimension that is orthogonal with respect to the first dimension.
Dependencies are inferred from the claim text.