Semiconductor memory device and method for manufacturing same
AssigneeKabushiki Kaisha Toshiba
InventorHiroshi ITOKAWA
Life of this patent
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Abstract
A semiconductor memory device according to one embodiment, includes an interconnect extending in a first direction, a semiconductor member extending in a second direction crossing the first direction, an electrode provided between the interconnect and the semiconductor member, a first insulating film provided between the interconnect and the electrode, a second insulating film provided between the first insulating film and the electrode, a third insulating film provided between the electrode and the semiconductor member, and a metal-containing layer provided between the first insulating film and the second insulating film or inside the first insulating film, and having a metal surface concentration of 1×1014 cm−2 or more and 5×1015 cm−2 or less.
Claims20
A semiconductor memory device, comprising:
- an interconnect extending in a first direction;
- a semiconductor member extending in a second direction crossing the first direction;
- an electrode provided between the interconnect and the semiconductor member;
- a first insulating film provided between the interconnect and the electrode;
- a second insulating film provided between the first insulating film and the electrode;
- a third insulating film provided between the electrode and the semiconductor member;
- and
- a metal-containing layer provided between the first insulating film and the second insulating film, and having a metal surface concentration of 1×1014 cm−2 or more and 5×1015 cm−2 or less.
A semiconductor memory device, comprising:
- an interconnect extending in a first direction;
- a semiconductor member extending in a second direction crossing the first direction;
- an electrode provided between the interconnect and the semiconductor member;
- a first insulating film provided between the interconnect and the electrode;
- a second insulating film provided between the first insulating film and the electrode;
- a third insulating film provided between the electrode and the semiconductor member;
- and
- a metal-containing layer provided between the first insulating film and the second insulating film, and containing molybdenum.
A method for manufacturing a semiconductor memory device, comprising:
- forming a stacked body by alternately stacking a first film and a second film on a substrate;
- forming a first trench extending in a first direction on the stacked body;
- forming a first recessed portion extending in the first direction on a side surface of the first trench by removing a portion of the second film through the first trench;
- forming a first insulating film on an inner surface of the first recessed portion;
- forming a metal-containing layer by introducing a metal into to a surface of the first insulating film;
- forming a second insulating film on a surface of the first insulating film;
- forming an electrode in the first recessed portion;
- forming a third insulating film on a side surface of the first trench;
- forming a semiconductor member in the first trench;
- dividing the semiconductor member, the third insulating film, the electrode, the second insulating film, and the metal-containing layer in the first direction;
- forming a second trench extending in the first direction in the stacked body;
- forming a second recessed portion extending in the first direction on a side surface of the second trench by removing a residual portion of the second film through the second trench;
- and
- forming an interconnect in the second recessed portion.
Dependencies are inferred from the claim text.