Manufacturing method of non-volatile memory and non-volatile memory

A manufacturing method of a non-volatile memory, comprising:

• providing a substrate comprising a first region and a second region which is located at a periphery of the first region;
• forming a first dielectric layer, a first conductive layer, a second dielectric layer, and a second conductive layer over the substrate, sequentially;
• patterning the second conductive layer, the second dielectric layer, the first conductive layer and the first dielectric layer to form at least two stacked structures on the first region of the substrate and a plurality of wall structures on the second region (104) of the substrate;
• forming a third conductive layer over the substrate;
• forming a bottom anti-reflective coating over the third conductive layer;
• etching back the bottom anti-reflective coating and the third conductive layer;
• and
• patterning the third conductive layer to form an erase gate between the at least two stacked structures and two word lines respectively on sidewalls outside the at least two stacked structures,
• wherein at least one of the plurality of wall structures extends from an isolation structure area to an active area.

A non-volatile memory, comprising:

• a plurality of memory cells located on a first region of a substrate;
• and
• a wall structure located on a second region of the substrate, wherein the second region is located at a periphery of the first region of the substrate,
• wherein the wall structure extends from an isolation structure area to an active area.