Finfet device with enlarged channel regions
AssigneeGlobalfoundries Inc.
InventorsMing-Cheng Chang, Ran Yan, Bo Bai
Life of this patent
Estimating the term…
Abstract
A semiconductor device including a semiconductor layer, a plurality of semiconductor fins formed on a surface of the semiconductor layer and a plurality of gate electrodes formed over the surface of the semiconductor layer is provided. The semiconductor fins extend in parallel to each other along a first direction parallel to the surface of the semiconductor layer and have a first height in a second direction that is perpendicular to the first direction, and the gate electrodes comprise longitudinal portions extending parallel to the semiconductor fins along the first direction and, in particular, having a second height in the second direction lower than the first height.
Claims21
A semiconductor device, comprising:
- a semiconductor layer;
- a plurality of semiconductor fins formed on a surface of said semiconductor layer, said semiconductor fins extending in parallel along a first direction that is parallel to said surface of said semiconductor layer, wherein said semiconductor fins have a first length in said first direction and have a first height in a second direction that is perpendicular to said first direction;
- and
- a plurality of gate electrodes formed over said surface of said semiconductor layer, said gate electrodes comprising longitudinal portions extending parallel to said semiconductor fins along said first direction, wherein said longitudinal portions of said gate electrodes have a second length in said first direction that is greater than said first length and, have a second height in said second direction that is less than said first height.
(canceled)
A FinFET device, comprising
- a plurality of semiconductor fins formed on a surface of a semiconductor layer extending in parallel to each other in a first direction parallel to said surface of said semiconductor layer, wherein each of said semiconductor fins comprises a transistor channel region;
- and
- a gate electrode layer extending along said first direction between said semiconductor fins and extending over sidewalls of said semiconductor fins in a second direction that is perpendicular to said first direction, wherein a length of said gate electrode layer in said first direction is greater than a length of said semiconductor fins in said first direction and wherein a height of said gate electrode layer in said second direction is less than a height of said semiconductor fins in said second direction.
-20. (canceled)
A semiconductor device, comprising:
- a semiconductor fin positioned above a surface of a semiconductor layer, wherein said semiconductor fin extends over said surface along a first direction that is substantially parallel to said surface;
- and
- a gate electrode structure positioned above said surface of said semiconductor layer, wherein said gate electrode structure laterally surrounds and completely encloses said semiconductor fin on four sides when said semiconductor device is viewed in a planar cross section taken through said semiconductor fin and said gate electrode structure that is parallel to said surface.
Dependencies are inferred from the claim text.