Semiconductor device and method of manufacturing the same

A semiconductor device, comprising:

• a first active structure on a substrate and including a first epitaxial pattern, a second epitaxial pattern and a first channel pattern between the first epitaxial pattern and the second epitaxial pattern in a first direction parallel to a top surface of the substrate, the first channel pattern including at least one channel pattern stacked on the substrate;
• a first gate structure disposed on top and bottom surfaces of the first channel pattern and extending in a second direction perpendicular to the first direction and parallel to the top surface of the substrate;
• a second active structure on the substrate and including a third epitaxial pattern, a fourth epitaxial pattern and a second channel pattern between the third epitaxial pattern and the fourth epitaxial pattern in the first direction, the second channel pattern including at least one channel pattern stacked on the substrate, wherein the number of stacked second channel patterns is greater than the number of stacked first channel patterns;
• a second gate structure disposed on top and bottom surfaces of the second channel pattern and extending in the second direction;
• a dummy active structure on the substrate, the dummy active structure including the second epitaxial pattern, the third epitaxial pattern, a dummy channel pattern between the second epitaxial pattern and the third epitaxial pattern in the first direction, the dummy channel pattern including at least one channel pattern stacked on the substrate;
• and
• a dummy gate structure disposed on top and bottom surfaces of the dummy channel pattern and extending in the second direction.

A semiconductor device, comprising:

• a plurality of epitaxial patterns, on a substrate, the plurality of epitaxial patterns spaced apart from each other in a first direction parallel to a top surface of the substrate;
• a plurality of channel pattern groups between the plurality of epitaxial patterns in the first direction, each of the plurality of channel pattern groups including a plurality of channel patterns stacked in a second direction perpendicular to the top surface of the substrate and at least one channel pattern group of the plurality of channel pattern groups having a first number of channel patterns different from a second number of channel patterns included in another channel pattern group of the plurality of channel pattern groups;
• and
• a plurality of gate structures on the plurality of the channel pattern groups, respectively, each of the plurality of gate structures extending in a third direction perpendicular to the first direction and parallel to the top surface of the substrate, and each of the plurality of gate structures disposed on top and bottom surfaces of the plurality of channel patterns of each of the plurality of channel pattern groups.