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US 2017/0250178 A1Published application
Decoupling capacitor
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChung-Hui CHEN, Hao-Chieh CHAN, Wei-Chih CHEN
Life of this patent
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Abstract
A device is disclosed that includes active areas, gates, and conductors. The active areas are disposed apart from each other. The gates are crossing over the active areas. The conductors are disposed over the active areas and disposed between the active areas. Each one of the conductors disposed between the active areas is arranged between adjacent two of the gates, and has an overlap with at least one corresponding gate of the gates to form at least one capacitor.
Claims21
A device comprising:
- a plurality of active areas disposed apart from each other;
- a plurality of gates crossing over the active areas;
- and
- a plurality of conductors disposed over the active areas and disposed between the active areas,
- wherein each one of the conductors disposed between the active areas is arranged between adjacent two of the gates and has an overlap with at least one corresponding gate of the gates to form at least one capacitor.
2 more elements
8-20. (canceled)
A device comprising:
- a plurality of active areas elongated in a first direction;
- a plurality of gates crossing over the active areas and elongated in a second direction, wherein the plurality of active areas and the plurality of gates define a plurality of regions;
- and
- a plurality of first conductors disposed in the plurality of regions,
- wherein at least one of the plurality of first conductors and at least one corresponding gate of the plurality of gates are partially overlapped in a third direction that is perpendicular to the first direction and the second direction, to form at least one capacitor,
- wherein the plurality of first conductors are elongated in the second direction.
3 more elements
A method comprising:
- forming a plurality of first conductors in regions surrounded by active areas in a first direction and gates in a second direction,
- wherein at least one of the plurality of first conductors and at least one corresponding gate of the gates are partially overlapped in a third direction that is perpendicular to the first direction and the second direction,
- wherein the plurality of first conductors are elongated in the second direction.
Dependencies are inferred from the claim text.