Semiconductor structure and manufacturing method thereof

A semiconductor structure, comprising:

• a substrate;
• a passivation disposed over the substrate;
• a post passivation interconnect (PPI) disposed over the passivation and including a pad portion extended over the passivation and a via portion coupled with the pad portion and extended from the pad portion into the passivation;
• a bump disposed on the pad portion;
• a polymeric layer disposed over the PPI;
• a molding disposed on the polymeric layer;
• and
• an interface between the polymeric layer and the molding,
• wherein the bump is surrounded by the polymeric layer and the molding, is interfaced with the polymeric layer and is at least partially exposed from the polymeric layer and the molding, the interface includes a curved portion with a curvature ramping from the pad portion to an outer surface of the bump, the molding includes a curved surface curved upward and towards the outer surface of the bump, a first angle between the outer surface of the bump and the curved portion of the interface is substantially same as a second angle between the curved portion of the interface and a curved surface of the molding.

A method of manufacturing a semiconductor structure, comprising:

• providing a substrate;
• forming a post passivation interconnect (PPI) including a plurality of first elongated members and a plurality of second elongated members over the substrate;
• disposing a first polymeric layer over the PPI;
• and
• disposing a second polymeric layer over the first polymeric layer,
• wherein the disposing of the first polymeric layer includes forming a recessed portion disposed between one of the plurality of first elongated members and one of the plurality of second elongated members, and the disposing of the second polymeric layer includes forming a protruded portion disposed within the recessed portion.