Semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsKoji ARAKI, Satoshi HATTORI
Life of this patent
Estimating the term…
Abstract
According to one embodiment, there is provided a semiconductor device including a first wiring, a semiconductor chip, a first bonding member, having a first melting temperature, located between the first wiring and the semiconductor chip, and a second wiring including a first connection unit and a second connection unit spaced from the first connection unit. A second bonding member having a second melting temperature higher than the first melting temperature is located between the semiconductor chip and the first connection unit. A third wiring is also provided, and a third bonding member having a third melting temperature lower than the second melting temperature is located between the second connection unit and the third wiring.
Claims20
A semiconductor device, comprising:
- a first wiring;
- a semiconductor chip;
- a first bonding member, having a first melting temperature, between the first wiring and the semiconductor chip;
- a second wiring including a first connection unit and a second connection unit spaced from the first connection unit;
- a second bonding member, having a second melting temperature higher than the first melting temperature, between the semiconductor chip and the first connection unit;
- a third wiring;
- and
- a third bonding member, having a third melting temperature lower than the second melting temperature, between the second connection unit and the third wiring.
A semiconductor device, comprising:
- a first wiring;
- a semiconductor chip;
- a first bonding member, having a first melting temperature, between the first wiring and the semiconductor chip;
- a second wiring including a first connection unit and a second connection unit spaced from the first connection unit;
- a second bonding member, having a second melting temperature different from the first melting temperature, between the semiconductor chip and the first connection unit;
- a third wiring;
- and
- a third bonding member, having a third melting temperature different from the second melting temperature, between the second connection unit and the third wiring.
A semiconductor device package, comprising:
- a first wiring;
- a semiconductor chip;
- a first bonding member, having a first melting temperature, between the first wiring and the semiconductor chip;
- a second wiring including a first connection unit, and a second connection unit spaced from the first connection unit;
- a second bonding member, having a second melting temperature different from the first melting temperature, between the semiconductor chip and the first connection unit;
- a third wiring;
- a third bonding member, having a third melting temperature different than the second melting temperature, between the second connection unit and the third wiring;
- and
- a resin encapsulant surrounding the first connection unit, the second connection unit, the first, second and third connection members and the semiconductor chip, wherein
- the second melting temperature is higher than at least one of the first and the third melting temperatures.
Dependencies are inferred from the claim text.