Semiconductor device and method of manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorsAkira NAKAJIMA, Masaaki HATANO
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Abstract
In one embodiment, a semiconductor device includes an insulator. The device further includes a plug provided in the insulator, the plug including a first barrier metal layer and a first conductive layer that is provided on the first barrier metal layer. The device further includes an interconnect provided outside the insulator, the interconnect being provided on the plug and the insulator and including the first barrier metal layer, the first conductive layer and a second conductive layer that is provided on the first conductive layer.
Claims20
A semiconductor device comprising:
- an insulator;
- a plug provided in the insulator, the plug including a first barrier metal layer and a first conductive layer that is provided on the first barrier metal layer;
- and
- an interconnect provided outside the insulator, the interconnect being provided on the plug and the insulator and including the first barrier metal layer, the first conductive layer and a second conductive layer that is provided on the first conductive layer.
A method of manufacturing a semiconductor device, comprising:
- forming an opening in an insulator;
- successively forming a first barrier metal layer and a first conductive layer inside and outside the opening;
- forming a second conductive layer on the first conductive layer;
- processing the first barrier metal layer, the first conductive layer and the second conductive layer to form a plug in the opening and to form an interconnect outside the opening, the plug including the first barrier metal layer and the first conductive layer, and the interconnect being formed on the plug and the insulator and including the first barrier metal layer, the first conductive layer and the second conductive layer.
Dependencies are inferred from the claim text.