Method of integrating capacitors in semiconductor devices and corresponding device
AssigneeSTMicroelectronics S.r.l.
InventorsFulvio Vittorio Fontana, Giovanni Graziosi
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Abstract
In an embodiment, a method of integrating capacitors in semiconductor devices includes: providing a lead-frame for a semiconductor device, the lead-frame including one or more electrically conductive areas, forming a dielectric layer over the electrically conductive area or areas, forming an electrically conductive layer over the dielectric layer thus forming one or more capacitors including the dielectric layer sandwiched between an electrically conductive area and the electrically conductive layer, and arranging a semiconductor die onto the lead-frame by providing electrical contact between the semiconductor die and the electrically conductive layer.
Claims20
A method, comprising:
- forming a capacitor, wherein forming the capacitor includes:
- forming a dielectric layer on an electrically conductive area of a lead-frame, and
- forming an electrically conductive layer on said dielectric layer, wherein forming the electrically conductive layer includes sandwiching said dielectric layer between said electrically conductive area and said electrically conductive layer, and
- arranging a semiconductor die onto said lead-frame and electrically connecting said semiconductor die to said electrically conductive layer.
A semiconductor device, comprising:
- a lead-frame including an electrically conductive area,
- a dielectric layer formed on said electrically conductive area,
- an electrically conductive layer formed on said dielectric layer, said dielectric layer being sandwiched between said electrically conductive area and said electrically conductive layer, the electrically conductive area, dielectric area, and electrically conductive layer forming a capacitor integrated in the device, and
- a semiconductor die arranged onto said lead-frame and electrically connected to said electrically conductive layer.
A method, comprising:
- forming a capacitor, wherein forming the capacitor includes:
- forming a dielectric layer on an electrically conductive area of a lead-frame, and
- forming an electrically conductive layer on said dielectric layer, wherein forming the electrically conductive layer includes sandwiching said dielectric layer between said electrically conductive area and said electrically conductive layer;
- arranging a semiconductor die onto said lead-frame after forming the capacitor;
- and
- electrically connecting said semiconductor die to said electrically conductive layer.
Dependencies are inferred from the claim text.