Semiconductor package having multi-phase power inverter with internal temperature sensor

22:

• The semiconductor package of claim 21, wherein the semiconductor package is configured as an open source semiconductor package.

23:

• The semiconductor package of claim 21, further comprising driver circuit situated on the common IC, wherein the driver circuit is configured to drive the power switches by a respective driver impedance matched to the respective power switch driven by the respective driver.

24:

• The semiconductor package of claim 21, wherein the driver circuit is configured to drive the power switches of the multi-phase power inverter responsive to the sensed temperature.

25:

• The semiconductor package of claim 21, further comprising a supply voltage input, and the common IC further comprises an undervoltage circuit, wherein the undervoltage circuit is configured to disable switching of multi-phase power inverter in response to an undervoltage condition at the supply voltage input.

26:

• The semiconductor package of claim 25, further comprising an integrated bootstrap function, wherein a respective bootstrap supply voltage couples to a respective power switch of the multi-phase power inverter through a bootstrap capacitor.

27:

• The semiconductor package of claim 21, wherein the semiconductor package is configured to operate with two-phase modulation.

28:

• The semiconductor package of claim 21 wherein the common IC comprises input/output terminals configured to receive one or more logic signals for one or more power switches.

29:

• The semiconductor package of claim 21, wherein the leadframe is a power quad flat no-lead (PQFN) leadframe.

31:

• The semiconductor package of claim 30, wherein the semiconductor package is configured as an open source semiconductor package.

32:

• The semiconductor package of claim 30, wherein the semiconductor package is configured to operate with two-phase modulation.

33:

• The semiconductor package of claim 30, further comprising a supply voltage input, and the common IC further comprises an undervoltage circuit, wherein the undervoltage circuit is configured to disable switching of multi-phase power inverter in response to an undervoltage condition at the supply voltage input.

34:

• The semiconductor package of claim 30, wherein the common IC is configured to drive the power switches of the multi-phase power inverter responsive to the sensed temperature.

35:

• The semiconductor package of claim 30, further comprising driver circuit situated on the common IC, wherein the driver circuit is configured to drive the power switches by a respective driver impedance matched to the respective power switch driven by the respective driver.

36:

• The semiconductor package of claim 30, further comprising an integrated bootstrap function, wherein a respective bootstrap supply voltage couples to a respective power switch of the multi-phase power inverter through a bootstrap capacitor.

37:

• The semiconductor package of claim 30, wherein the leadframe is a power quad flat no-lead (PQFN) leadframe.

38:

• The semiconductor package of claim 30, wherein the common IC comprises input/output terminals configured to receive one or more logic signals for one or more power switches.

39:

• The semiconductor package of claim 30, wherein the temperature sensor is within approximately 3 millimeters of each of the power switches.

40:

• The semiconductor package of claim 30, wherein the common IC is further configured to control switching of the multi-phase power inverter.