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US 2017/0250084 A1Published application
Phosphorus or arsenic ion implantation utilizing enhanced source techniques
AssigneeEntegris, Inc.
InventorsOleg Byl, Sharad N. Yedave, Joseph D. Sweeney, Barry Lewis Chambers, Ying Tang
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Abstract
Apparatus and method for use of solid dopant phosphorus and arsenic sources and higher order phosphorus or arsenic implant source material are described. In various implementations, solid phosphorus-comprising or arsenic-comprising materials are provided in the ion source chamber for generation of dimer or tetramer implant species. In other implementations, the ion implantation is augmented by use of a reactor for decomposing gaseous phosphorus-comprising or arsenic-comprising materials to form gas phase dimers and tetramers for ion implantation.
Claims51
An ion implantation system, comprising:
- an ion implanter comprising an ion source chamber;
- and
- a reactor configured to receive gaseous phosphorus or arsenic dopant precursor material and form gaseous polyatomic phosphorus or gaseous polyatomic arsenic therefrom, wherein the reactor is constituted in or coupled in fluid communication with flow circuitry arranged to deliver gas phase material to the ion source chamber for ionization therein to form implant species for implantation in a substrate in the ion implanter.
An ion implantation system, comprising:
- an ion implanter comprising an ion source chamber;
- a supply of a phosphorus-comprising or arsenic-comprising gas phase precursor, wherein the supply is configured to dispense the precursor to the ion source chamber;
- a monitoring and control assembly configured to operate the ion source chamber in a first phase of operation under conditions that deposit and accumulate solid polyatomic phosphorus or arsenic in the ion source chamber deriving from the precursor dispensed to the ion source chamber from said supply, and in a second phase of operation under conditions that generate vapors comprising dimers or tetramers from the deposited solid polyatomic phosphorus or arsenic for ion implantation.
An ion implantation system, comprising:
- an ion implanter comprising an ion source chamber;
- a dopant source material supply assembly comprising one or more source vessels containing gaseous phosphorus or arsenic precursor compound, and configured to dispense the precursor compound for use in the ion implanter;
- and
- a conversion assembly configured to convert dispensed gaseous phosphorus or arsenic precursor compound to gaseous polyatomic elemental phosphorus or arsenic material, and to provide the gaseous polyatomic elemental phosphorus or arsenic material for use in the ion source chamber to generate phosphorus or arsenic implantation species therefrom.
1 more element
An ion implantation system, comprising:
- an ion implanter comprising an ion source chamber;
- and
- a gas supply assembly comprising one or more gas supply vessels arranged to supply a mixture of gases to the ion implanter, wherein the mixture of gases comprises one of (i)-(viii):
- (i) PH3 and PF3, wherein the concentration of PH3 is in a range of from 40% to 60% by volume, based on the total volume of the mixture of gases;
- (ii) PH3 and PF5, wherein the concentration of PH3 is in a range of from 50% to 75% by volume, based on the total volume of the mixture of gases;
- (iii) PFx and H2, wherein x has any stoichiometric acceptable value, and wherein the concentration of H2 does not exceed 50% by volume, based on the total volume of the mixture of gases;
- (iv) PFx, PH3, H2, and inert gas, wherein x has any stoichiometric acceptable value;
- (v) AsH3 and AsF3, wherein the concentration of AsH3 is in a range of from 40% to 60% by volume, based on the total volume of the mixture of gases;
- (vi) AsH3 and AsF5, wherein the concentration of AsH3 is in a range of from 50% to 75% by volume, based on the total volume of the mixture of gases;
- (vii) AsFx and H2, wherein x has any stoichiometric acceptable value, and wherein the concentration of H2 does not exceed 50% by volume, based on the total volume of the mixture of gases;
- and (viii) AsFx, AsH3, H2, and inert gas, wherein x has any stoichiometric acceptable value.
8 more elements
A method of enhancing performance of an ion implanter, comprising delivering to an ion source chamber thereof a gas mixture selected from among (i)-(viii):
- (i) PH3 and PF3, wherein the concentration of PH3 is in a range of from 40% to 60% by volume, based on the total volume of the mixture of gases;
- (ii) PH3 and PF5, wherein the concentration of PH3 is in a range of from 50% to 75% by volume, based on the total volume of the mixture of gases;
- (iii) PP', and H2, wherein x has any stoichiometric acceptable value, and wherein the concentration of H2 does not exceed 50% by volume, based on the total volume of the mixture of gases;
- (iv) PFx, PH3, H2, and inert gas, wherein x has any stoichiometric acceptable value;
- (v) AsH3 and AsF3, wherein the concentration of AsH3 is in a range of from 40% to 60% by volume, based on the total volume of the mixture of gases;
- (vi) AsH3 and AsF5, wherein the concentration of AsH3 is in a range of from 50% to 75% by volume, based on the total volume of the mixture of gases;
- (vii) AsFx and H2, wherein x has any stoichiometric acceptable value, and wherein the concentration of H2 does not exceed 50% by volume, based on the total volume of the mixture of gases;
- and (viii) AsFx, AsH3, H2, and inert gas, wherein x has any stoichiometric acceptable value.
5 more elements
Dependencies are inferred from the claim text.