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US 2017/0250081 A1Published application
Semiconductor storage device
AssigneeKabushiki Kaisha Toshiba
InventorsAkifumi GAWASE, Yukiteru MATSUI, Takahiko KAWASAKI
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Abstract
In a substrate processing method according to the embodiment, a first material is implanted into a surface of a target film to modify the surface of the target film. The surface of the target film is dissolved to remove the surface of the target film by bringing a catalytic material close to the surface of the target film or by contacting the catalytic material to the surface of the target film while supplying a process solution on the surface of the target film which has been modified.
Claims20
A substrate processing method comprising:
- implanting a first material into a surface of a target film to be processed in order to modify the surface of the target film;
- and
- dissolving the surface of the target film to remove the surface of the target film by bringing a catalytic material dose to the surface of the target film or by contacting the catalytic material to the surface of the target film while supplying a process solution on the surface of the target film which has been modified.
Dependencies are inferred from the claim text.