Resist underlayer film-forming composition
AssigneeNissan Chemical Industries, Ltd.
InventorsTokio NISHITA, Noriaki FUJITANI, Rikimaru SAKAMOTO
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Abstract
There is provided a composition that a resist pattern having a reduced LWR representing variations in line width of the resist pattern, compared to conventional resist patterns, can be formed. A resist underlayer film-forming composition for lithography comprising a polymer, 0.1 to 30 parts by mass of a compound having an amino group protected with a tert-butoxycarbonyl group and an unprotected carboxyl group, or a hydrate of the compound, relative to 100 parts by mass of the polymer, and a solvent.
Claims7
A resist underlayer film-forming composition for lithography comprising a polymer, 0.1 to 30 parts by mass of a compound having an amino group protected with a Boc group and an unprotected carboxyl group, or a hydrate of the compound, relative to 100 parts by mass of the polymer, and a solvent.
Dependencies are inferred from the claim text.