Method for inter-chamber process
AssigneeApplied Materials, Inc.
InventorsXinyu BAO, Errol Antonio C. SANCHEZ, Zhiyuan YE, Keun-Yong BAN
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Abstract
Embodiments described herein generally relate to a substrate processing system, such as an etch processing system. In one embodiment, a method of processing a substrate is disclosed herein. The method includes removing a native oxide from a surface of the substrate, baking the substrate in a pre-treatment thermal chamber such that double atomic steps are formed on the surface of the substrate, and forming an epitaxial layer on the substrate after the substrate is baked.
Claims14
A method of processing a substrate, comprising:
- removing a native oxide from a surface of the substrate, wherein the substrate contains silicon;
- baking the substrate in a pre-treatment thermal chamber at a temperature less than 1000° C. with a gas consisting essentially of hydrogen such that double atomic steps are formed on the surface of the substrate;
- and
- depositing a layer on the substrate after the substrate is baked.
8-14. (canceled)
A method of processing a substrate, comprising:
- removing a native oxide from a surface of the substrate, wherein the substrate contains silicon;
- baking the substrate in a pre-treatment thermal chamber at a temperature between about 800° C. and about 1000° using a gas consisting essentially of hydrogen such that double atomic steps are formed on the surface of the substrate;
- and
- forming an epitaxial layer on the substrate after the substrate is baked.
Dependencies are inferred from the claim text.