Oxide and manufacturing method thereof
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorShunpei YAMAZAKI
Life of this patent
Estimating the term…
Abstract
Provided is an oxide with a novel crystal structure, an oxide with high crystallinity, or an oxide with low impurity concentration. An oxide has a hexagonal atomic arrangement in the case of a single crystal. The oxide has a homologous structure of indium, an element M (aluminum, gallium, yttrium, or tin), and zinc. The oxide has a lattice point group observed through an analysis of a first region in a transmission electron microscopy image of a top surface of the oxide. In a Voronoi diagram having a plurality of Voronoi regions obtained through a Voronoi analysis of the lattice point group, a proportion of hexagonal Voronoi regions is higher than or equal to 78% and lower than or equal to 100%.
Claims3
A manufacturing method of an oxide, comprising the steps of:
- supplying a sputtering gas containing at least one of oxygen and a rare gas to a deposition chamber;
- giving a potential difference between a target and a substrate to generate plasma containing an ion of the sputtering gas in the vicinity of the target and to accelerate the ion of the sputtering gas toward the target,
- wherein the target comprises indium, zinc, an element M, and oxygen,
- wherein the element M is one of aluminum, gallium, yttrium, and tin,
- wherein the target comprises a region with a polycrystalline structure, and
- wherein the target comprises a cleavage plane;
- making the accelerated ion of the sputtering gas collide with the target, so that bond cut occurs from an end portion of the cleavage plane, wherein the bond cut is promoted when a charge from the plasma is received;
- separating a plurality of crystalline flat-plate-like particles of a compound containing a plurality of elements, atoms contained in the target, and aggregates of the atoms contained in the target from the target by the collision of the accelerated ion, wherein the plurality of crystalline flat-plate-like particles receive negative charges from oxygen ions and have their surfaces negatively charged while flying in the plasma;
- depositing one of the plurality of crystalline flat-plate-like particles over the substrate with its flat plane facing the substrate;
- depositing another one of the plurality of crystalline flat-plate-like particles over a region apart from the one of the plurality of crystalline flat-plate-like particles over the substrate while repelling the one of the plurality of crystalline flat-plate-like particles;
- depositing the atoms and the aggregates of the atoms in a gap between the one of the plurality of crystalline flat-plate-like particles and the another one of the plurality of crystalline flat-plate-like particles;
- and
- filling the gap between the one of the plurality of crystalline flat-plate-like particles and the another one of the plurality of crystalline flat-plate-like particles with the atoms and the aggregates of the atoms that cause a lateral growth.
Dependencies are inferred from the claim text.