Thin Film Transistor and Manufacturing Method Thereof, Array Substrate and Manufacturing Method Thereof, Display Apparatus

A manufacturing method of a thin film transistor, comprising steps of forming a gate, a gate insulating layer, a semiconductor active layer, a source and a drain on a substrate, wherein the steps of forming the gate insulating layer and the semiconductor active layer comprise:

• preparing an insulating film, the insulating film comprises metal oxide insulating material;
• performing ion implantation on a predefined region of the insulating film, so that the metal oxide insulating material of partial-thickness of the insulating film in the predefined region is transformed into metal oxide semiconductor material to form the semiconductor active layer, and the rest of the insulating film forms the gate insulating layer.

A thin film transistor, comprising a gate, a gate insulating layer, a semiconductor active layer, a source and a drain, the semiconductor active layer is provided above the gate insulating layer and is integrated with the gate insulating layer,

• wherein the gate insulating layer comprises metal oxide insulating material,
• the semiconductor active layer comprises metal oxide semiconductor material formed by performing ion implantation on the metal oxide insulating material.