Method of Producing Transition Metal Dichalcogenide Layer
AssigneesImec Vzw, Katholieke Universiteit Leuven, KU LEUVEN R&D
InventorsMatty Caymax, Markus Heyne, Annelies Delabie
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Abstract
Method of producing one or more transition metal dichalcogenide (MX2) layers on a substrate, comprising the steps of: obtaining a substrate having a surface and depositing MX2 on the surface using ALD deposition, starting from a metal halide precursor and a chalcogen source (H2X), at a deposition temperature of about 300° C. Suitable metals are Mo and W, suitable chalcogenides are S, Se and Te. The substrate may be (111) oriented. Also mixtures of two or more MX2 layers of different compositions can be deposited on the substrate, by repeating at least some of the steps of the method.
Claims20
A method of producing at least one transition metal dichalcogenide layer (MX2) on a substrate, the method comprising:
- obtaining a substrate having a surface;
- and
- depositing a transition metal dichalcogenide layer (MX2) on the surface using ALD deposition, starting from a metal halide precursor and a chalcogen source (H2X).
Dependencies are inferred from the claim text.