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US 2017/0250073 A1Published application
Trench metal insulator metal capacitor with oxygen gettering layer
AssigneeInternational Business Machines Corporation
InventorsTakashi Ando, Eduard A. Cartier, Michael P. Chudzik, Aritra Dasgupta, Herbert L. Ho, Donghun Kang, Rishikesh Krishnan, Vijay Narayanan, Kern Rim
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Abstract
A method including forming an oxygen gettering layer on one side of an insulating layer of a deep trench capacitor between the insulating layer and a substrate, the oxygen gettering layer including an aluminum containing compound, and depositing an inner electrode on top of the insulating layer, the inner electrode including a metal.
Claims15
A method comprising:
- forming a deep trench capacitor in a semiconductor substrate, the deep trench capacitor comprising an oxygen gettering layer on a first side of a node dielectric, the oxygen gettering layer comprising an aluminum containing compound.
A structure comprising:
- a first oxygen gettering layer on one side of an insulating layer of a deep trench capacitor between the insulating layer and a substrate, the first oxygen gettering layer comprising an aluminum containing compound;
- and
- an inner electrode on top of the insulating layer, the inner electrode comprising a metal.
Dependencies are inferred from the claim text.