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US 2017/0250072 A1Published application
Film forming method and film forming system
AssigneeTokyo Electron Limited
InventorYuya Takamura
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AssigneeTokyo Electron Limited
InventorYuya Takamura
Estimating the term…
A film forming method of depositing a thin film of a reaction product generated by a reaction between a raw material gas and a reactive gas on a substrate by alternately supplying the raw material gas and the reactive gas to the substrate accommodated in a processing container. The film forming method includes: storing the raw material gas in a reservoir; adsorbing the raw material gas on the substrate by supplying the raw material gas stored in the reservoir to the substrate; and reacting the raw material gas and the reactive gas with each other by supplying the reactive gas to the substrate on which the raw material gas is adsorbed to generate the reaction product; wherein the storing, the adsorbing, and the reacting are repeated a plurality of times, while a condition for the storing is changed at least once.
A film forming method of depositing a thin film of a reaction product generated by a reaction between a raw material gas and a reactive gas on a substrate by alternately supplying the raw material gas and the reactive gas to the substrate accommodated in a processing container, the film forming method comprising:
A film forming system of depositing a thin film of a reaction product generated by a reaction between a raw material gas and a reactive gas on a substrate by alternately supplying the raw material gas and the reactive gas to the substrate, the film forming system comprising:
Dependencies are inferred from the claim text.