Pattern formation method
AssigneeKabushiki Kaisha Toshiba
InventorYuriko SEINO
Life of this patent
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Abstract
According to one embodiment, a pattern formation method includes forming a base structure including first and second guide portions each including a pinning portion, and a neutral portion, forming a block copolymer film containing first and second polymers on the bass structure, performing a predetermined treatment for the block copolymer film, thereby forming first and second pattern portions formed of the first polymer, forming third and fourth pattern portions formed of the second polymer, and forming a fifth pattern portion formed of the first and second polymers. The fifth pattern portion includes a plurality of first portions formed of the second polymer, and a second portion formed of the first polymer and provided on the neutral portion and the first portions.
Claims20
A pattern formation method comprising:
- forming a base structure on an underlying region, the base structure including first and second guide portions each including a pinning portion having a higher affinity for a first polymer than for a second polymer, and each extending in a first direction, and a neutral portion located between the first and second guide portions and having an affinity for the first and second polymers;
- forming a block copolymer film containing the first and second polymers on the base structure;
- performing a predetermined treatment for the block copolymer film, thereby forming first and second pattern portions formed of the first polymer on the first and second guide portions, forming third and fourth pattern portions formed of the second polymer on the neutral portion, and forming a fifth pattern portion formed of the first and second polymers between the third and fourth pattern portions, the fifth pattern portion including a plurality of first portions formed of the second polymer, and a second portion formed of the first polymer and provided on the neutral portion and the first portions;
- and
- removing the first and second pattern portions and the second portion of the fifth pattern portion to form first and second trench patterns and a plurality of first hole patterns.
Dependencies are inferred from the claim text.