Methods and apparatuses for controlling plasma properties by controlling conductance between sub-chambers of a plasma processing chamber

A method for processing a substrate using plasma in a plasma processing system having at least one plasma processing chamber, comprising:

• providing a first sub-chamber having a first plasma generation means for generating first plasma having first plasma characteristics;
• providing a second sub-chamber having a second plasma generation means for generating second plasma having second plasma characteristics different from said first plasma characteristics, said second sub-chamber having a work piece holder for supporting said substrate in said second sub-chamber during said processing, wherein a passage interconnects said first sub-chamber and said second sub-chamber, said passage being controlled by a gate for selectively configuring said passage to operate in accordance with at least a first passage condition and a second passage condition, said first passage condition permitting a first conductance rate of said first plasma into said second sub-chamber, said second passage condition permitting a second conductance rate of said first plasma into said second sub-chamber, whereby said first conductance rate is different from said second conductance rate;
• processing said substrate in said second sub-chamber while said gate is operated to permit said first conductance rate;
• and
• processing said substrate in said second sub-chamber while said gate is operated to permit said second conductance rate.