Corrosion-resistant components and methods of making
AssigneeCoorsTek, Inc.
InventorsMatthew Simpson, Ramesh Divakar, Alan Filer
Life of this patent
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Abstract
A corrosion-resistant component configured for use with a semiconductor processing reactor, the corrosion-resistant component comprising: a) a ceramic insulating substrate; and, b) a white corrosion-resistant non-porous outer layer associated with the ceramic insulating substrate, the white corrosion-resistant non-porous outer layer having a thickness of at least 50 μm, a porosity of at most 1%, and a composition comprising at least 15% by weight of a rare earth compound based on total weight of the corrosion-resistant non-porous layer; and, c) an L* value of at least 90 as measured on a planar surface of the white corrosion-resistant non-porous outer layer. Methods of making are also disclosed.
Claims33
A corrosion-resistant component configured for use with a semiconductor processing reactor, the corrosion-resistant component comprising:
- a) a ceramic insulating substrate;
- and,
- b) a white corrosion-resistant non-porous outer layer associated with the ceramic insulating substrate, the white corrosion-resistant non-porous outer layer having a thickness of at least 50 μm, a porosity of at most 1%, and a composition comprising at least 15% by weight of a rare earth compound based on total weight of the corrosion-resistant non-porous layer;
- and,
- c) an L* value of at least 90 as measured on a planar surface of the white corrosion-resistant non-porous outer layer.
A method for preparing a white corrosion-resistant component for use with a semiconductor processing reactor, comprising:
- laying up a first layer of a sinterable powder composition comprising at least 15% by weight based on total weight of the first layer of a rare earth compound, and a second layer of sinterable substrate material to form a pre-laminate, wherein the sinterable substrate material is selected from the group consisting of aluminum oxide, aluminum nitride, silicon nitride, silicate-based materials and mixtures of two or more thereof, and wherein the first layer is less than 50% as thick as the second layer;
- and,
- heat treating the pre-laminate to form a corrosion-resistant component including a white corrosion-resistant non-porous outer layer, having a thickness of at least 50 μm and a porosity of at most 1%, to form a corrosion-resistant laminate;
- and,
- heat treating the corrosion-resistant laminate further in air at a temperature from at least 800° C. to at most 1500° C. for a time from at least 0.5 h to at most 48 h to form a white corrosion-resistant component having an L* value of at least 90 as measured on a planar surface of the white corrosion-resistant non-porous outer layer.
A corrosion-resistant component configured for use with a semiconductor processing reactor, the corrosion-resistant component comprising:
- a) a ceramic insulating substrate;
- and,
- b) a white corrosion-resistant non-porous outer layer associated with the ceramic insulating substrate, the white corrosion-resistant non-porous outer layer having a thickness of at least 50 μm, a porosity of at most 1%, and a composition comprising at least 15% by weight of a rare earth compound based on total weight of the corrosion-resistant non-porous layer and a sintering aid added to the rare-earth compound in the range from about 300 ppm to about 20% by weight based upon total weight of the rare-earth compound, wherein the sintering aid is at least one material chosen from ZrO2, HfO2, and CeO2;
- c) at least one interposing layer embedded in the ceramic insulating substrate, or layered between the ceramic insulating substrate and the corrosion-resistant non-porous layer, wherein the at least one interposing layer is at least one material chosen from rare earth oxides, rare earth silicates, rare earth aluminates, and mixtures of two or more thereof;
- and,
- d) an L* value of at least 90 as measured on a planar surface of the white corrosion-resistant non-porous outer layer.
A corrosion-resistant component configured for use with a semiconductor processing reactor, the corrosion-resistant component comprising:
- a) a ceramic insulating substrate;
- b) a corrosion-resistant non-porous outer layer associated with the ceramic insulating substrate, the corrosion-resistant non-porous layer having a thickness of at least 50 μm, a porosity of at most 1%, and a composition comprising at least 15% by weight of a rare earth compound based on total weight of the corrosion-resistant non-porous layer and a first sintering aid added to the rare-earth compound in the range from about 300 ppm to about 20% by weight based upon total weight of the rare-earth compound;
- c) at least one interposing layer embedded in the ceramic insulating substrate, or layered between the ceramic insulating substrate and the corrosion-resistant non-porous layer, wherein the at least one interposing layer is at least one material chosen from rare earth oxides, rare earth silicates, rare earth aluminates, and mixtures of two or more thereof;
- the at least one interposing layer further comprising a second sintering aid added to the at least one material chosen from rare earth oxides, rare earth silicates, rare earth aluminates, and mixtures of two or more thereof, and,
- d) a carbon content of at most 1000 ppm.
Dependencies are inferred from the claim text.