Method for writing in a magnetic device

A method for programming a magnetic device comprising a plurality of magnetic logical unit MLU cells using a single programming current;

• each including a magnetic tunnel junction comprising a ferromagnetic storage layer having a storage magnetization that is pinned at a low threshold temperature and freely orientable at a high threshold temperature, a ferromagnetic sense layer having a sense magnetization, and a tunnel barrier layer between the storage layer and the sense layer;
• a programming line physically separated from each of said plurality of MLU cells by an electrically non-conductive layer such that no current can pass directly from the programming line to the magnetic tunnel junction, and configured for passing a programming current pulse for programming a subset of said plurality of MLU cells, the subset comprising more than one MLU cell;
• the method comprising:
• passing the programming current in the programming line for heating the magnetic tunnel junction of said MLU cells in the subset at the high threshold temperature such as to unpin the ferromagnetic storage magnetization of each of the MLU cells in the subset;
• wherein the programming current is further adapted for generating a programming magnetic field adapted for switching the storage magnetization of each MLU cell in the subset in a programmed direction.