High-sensitivity electronic detector

An integrated electronic detector configured for detecting a variation in potential on an input terminal and comprising:

• an MOS transistor having a drain forming an output terminal, wherein a variation of drain current is representative of variation in potential on the input terminal;
• a bipolar transistor having a base forming the input terminal and having a collector that is electrically connected to the gate of the MOS transistor;
• wherein the integrated electronic detector has a first configuration in which the bipolar transistor is conducting and the MOS transistor is turned off, and has a second configuration in which the bipolar transistor is turned off and the MOS transistor is in a sub-threshold operation, the integrated electronic detector being configured for going from the first configuration to the second configuration in response said variation in potential on the input terminal.